Realization of memory operation by means of Ni-Zn-ferrite thin-film on MOS-FET

Satoshi Mizukami; Kan Shimizu; Osamu Sakurai; Naoki Wakiya; Kazuo Shinozaki; Nobuyasu Mizutani

doi:10.14853/pcersj.2002F.0.468.0

15th Fall Meeting of The Ceramic Society of Japan

DOI https://doi.org/10.14853/pcersj.2002F.0.468.0

Conference information

Host: The Ceramic Society of Japan

Realization of memory operation by means of Ni-Zn-ferrite thin-film on MOS-FET

Satoshi Mizukami, Kan Shimizu, Osamu Sakurai, Naoki Wakiya, Kazuo Shinozaki, Nobuyasu Mizutani

Author information

Keywords: Ni-Zn ferrite, electric properties, PLD, MOS-FET substrate, ferromagnetic thin film, hall effect

CONFERENCE PROCEEDINGS FREE ACCESS

Pages 468

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Abstract

Control of the current between source-drain is tried by using the Lorentz force generated with the magnetic flux density and the current which flows between S-D of a FET type transistor. Ni-Zn ferrite, Fe thin films were incorporated within MOSFET to design four different types of the structure. We discuss the effect of the remanent magnetic flux density which each structure object has on the Id-Vd characteristic.

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