Lattice defects and electrical properties in bismuth titanate single crystal

Abstract

Generation of lattice defects and their effects on electrical properties in bismuth titanate (BIT) were investigated using BIT single crystal. Lattice constants of BIT decreased gradually during annealing at 1000°C. In the measurement of oxygen partial pressure dependence on electrical conductivity of BIT single crystal, large anisotropy was observed between the direction along a(b)-axis and that along c ? axis. These results were attributed to the unique crystal structure of BIT.