Preprints of Annual Meeting of The Ceramic Society of Japan
Preprints of Fall Meeting of The Ceramic Society of Japan
15th Fall Meeting of The Ceramic Society of Japan
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Host: The Ceramic Society of Japan

The growth mechanism and characterization of high-quality β-FeSi2 thin film
Takeshi Kimura, Kensuke Akiyama, Hiroshi Funakubo
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Keywords: β iron silicide, MOCVD method, film, semiconductor, buffer layer, RF magnetron sputtering method
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Pages 473

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Abstract
Epitaxial (101)/(110)-oriented β-FeSi2 thin films were grown by MOCVD on (111)Si substrates with and without β-FeSi2 buffer layer prepared by RF magnetron sputtering method. By inserting buffer layer, highly-oriented films were obtained.
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© The Ceramic Society of Japan 2002
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