Abstract
Nb-doped SrTiO3 thin films have been fabricated on LaAlO3 (100), Silica glass and Yttria stabilized zirconia (YSZ) substrates by the MOCVD technique. The effect of the oxygen partial pressure and the deposition temperature on the film properties such as surface roughness, lattice constants and film composition has been investigated. Furthermore, effects of oxygen vacancy or impurity doping on electrical properties were investigated for Nb doped SrTiO3 thin film, and the mechanism was discussed.