AlN films on 6H-SiC surfaces —the difference of polarity—

Masashi Harada; Yukari Ishikawa; Takayuki Nagano; Tomohiro Saito; Noriyoshi Shibata

doi:10.14853/pcersj.2002F.0.492.0

15th Fall Meeting of The Ceramic Society of Japan

DOI https://doi.org/10.14853/pcersj.2002F.0.492.0

Conference information

Host: The Ceramic Society of Japan

AlN films on 6H-SiC surfaces

—the difference of polarity—

Masashi Harada, Yukari Ishikawa, Takayuki Nagano, Tomohiro Saito, Noriyoshi Shibata

Author information

Keywords: Integration, Aluminum Nitride, Silicon Carbide, Polarity, X-ray photoelectron spectroscopy, Electron Microscopy

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Pages 492

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Abstract

AlN is a candidate material as SiC-based metal-insulator-semiconductor (MIS) structures for high-power devices and high-temperature applications. In this study, wurtzite AlN films on the Si and C faces of SiC were characterized by SEM, AFM, TEM and XPS. From XPS results, the photoelectron cross-sectional ratios of Al2p to N1s on the Si face was larger than that on the C face. The results indicate that polarity of AlN on the Si face is different from that on the C face.

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