Preparation of ZnO by a nearby sublimation chemical vapor deposition method

Abstract

ZnO films were prepared by a nearby sublimation chemical vapor deposition method using bis(2,4-pentanedionato)zinc [Zn(C₅H₇O₂)₂] as a source material. The deposition rate increases exponentially from 0.58 to 147 nm/min with the increasing substrate temperature (T_s). C-axis highly preferred orientation of the ZnO films were obtained at distance of substrate to source surface; D=5.0 mm and T_s =300°C.