Abstract
The effects of coating diamond on the surface of SiC ceramics for fluorine plasma resistance were investigated. Diamond thin film was deposited by microwave plasma-assisted chemical vapor deposition (CVD) using a system of CH4-H2. Microwave CF4 plasmas were used to study the fluorination and etching rate of diamond, and several ceramic materials were also examined for comparison. Diamond coat SiC revealed remarkable resistance compared to SiC and also to aluminum compounds such as AlN, Al2O3 and YAG. ESCA measurement showed that the surface of the diamond exposed had C-F bond and it thought to contribute the stability of diamond in microwave CF4 plasmas. For further investigation, corrosion resistance for radio-frequency NF3 plasmas was also studied to estimate the use for manufacturing process of semiconductor device.
