抄録
Organic materials have been of interest recently as new materials for electronic and optical devices, because they have the possibility to exhibit unique features such as flexible, wide area and low cost of fabrication. In this study, we report the ferroelectric and structural properties in vinylidene fluoride (VDF) oligomer, having the possibility to open new way to novel ferroelectric devices. The VDF oligomer, CF3-(CH2CF2)17-I, films of 5-100nm were fabricated by vacuum deposition. The structures, molecular orientation and surface morphology depend on the deposition parameters (substrate temperature;Ts, substrate species). The well-ordered VDF oligomer films exhibit a rectangular polarization hysteresis loop. The remanent polarization evaluated to be 130mC/m2, which is the largest value among fluorinated ferroelectric molecules. The polarization reversal of VDF molecules can be performed over 10^5 cycles. These results suggest that the VDF oligomer can be one of candidates for disposable ferroelectric memory devices.
