抄録
The effect of various stacking sequences on the microwave dielectric properties of the CaTiO3/(Li1/2Sm1/2)TiO3 (CT/LST) multilayered thin films prepared by the sol-gel process was investigated. It could be obtained a well-crystallized perovskite structure at annealing temperatures of 800 oC which was lower than those of bulk ceramics. The dielectric constant (ε), dielectric loss (tan δ) and temperature coefficient of capacitance (TCK) of CaTiO3 films measured at 6 GHz were 160, 0.003 and -1340 ppm/oC, respectively. In contrast, the (Li1/2Sm1/2)TiO3 films showed ε of 35, tan δ of 0.001 and TCK value of +380 ppm/oC. As the number of CaTiO3 layers in the CT/LST multilayered thin films increased, the dielectric constant increased, while the TCK value decreased by obeying dielectric mixing rules.
