Preprints of Annual Meeting of The Ceramic Society of Japan
Preprints of Fall Meeting of The Ceramic Society of Japan
16th Fall Meeting of The Ceramic Society of Japan & The 5th International Meeting of Pacific Rim Ceramic Societies(PacRim5)
Session ID : 06-P-10
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Leakage Current Properties of PZT Thin Film Capacitors
*Takashi NOZAKAYoichiro MASUDA
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CONFERENCE PROCEEDINGS FREE ACCESS

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Abstract
Lead Zirconium Titanium oxide: Pb(Zr,Ti)O3 thin films were fabricated on Pt(111)/TiOx/SiO2/Si(100) and some oxide electrodes(SRO,IrO2) on Si substrates by the metal organic decomposition(MOD) method. A leakage current and ferroelectric polarization switching in these PZT film capacitors were measured. We have discussed to the nature of electrical conduction, and a fatigue of ferroelectric polarization switching in the PZT films. Therefore, it is clearly that a variety of mechanism including surface-limited process such as Schottky, Poole-Frenkel and Space-Charge-Limited-Currents (SCLS), the fatigue of polarization switching caused by a ferroelectric domain pinning effect.
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© The Ceramic Society of Japan 2003
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