Abstract
ZnO films were prepared by a nearby vaporizing chemical vapor deposition (NV-CVD) method with ultrasonic using bis(2,4-pentanedionato)zinc as a source material. The substrate was heated by a hot Al suscepter with a resistance cartridge heater. To control the intensity of radiant heat from the nearby substrate, distance between the substrate and the surface of source material was adjusted by using a micrometer. The surface morphology of the film was observed using a scanning electron microscope (SEM) and an atomic force microscope (AFM). The structure of the films was characterized by X-ray diffraction (XRD). C-axis preferred orientation ZnO films were obtained in the temperature range from 100 to 600°C.
