Microstructure Control and Electronic Properties of Zn-Ti-Ni-O Ceramics

Seung Chul CHOI; Hwan KIM; N NAKAMURA

doi:10.14853/pcersj.2003F.0.423.0

16th Fall Meeting of The Ceramic Society of Japan & The 5th International Meeting of Pacific Rim Ceramic Societies(PacRim5)

Session ID : 09-I-04

DOI https://doi.org/10.14853/pcersj.2003F.0.423.0

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Host: The Ceramic Society of Japan

Microstructure Control and Electronic Properties of Zn-Ti-Ni-O Ceramics

*Seung Chul CHOI, Hwan KIM, N NAKAMURA

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Abstract

Microstructure controlled semiconducting Zn-Ti-Ni-O and Zn-Ti-O system were investigated. The specimens sintered at the temperature between 1250C and 1450C exhibited PTCR effect between ?50 and 350C with resistivity ratio exceeding three decades. Semiconducting Zn-Ti-Ni-O is consisted of two phases, one in n?type ZnO and the other is p-type spinel structure. Also, the controlled microstructure of Zn-Ti-Ni-O was sensitive for CO sensing

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