抄録
Aluminum Nitride (AlN) ceramics are widely used as a substance material for high-power and high speed semiconductors because of a high thermal conductivity, a low thermal expansion and a large electrical resistivity. Joining technique between AlN ceramics has been expected to develop of these electrical and electronic applications. A spark plasma sintering (SPS) process in which a high pulse electric current is applied to powder samples has been developed recently. We have succeeded joining between AlN ceramics by sandwiching TiH2 and Ti foil between the ceramics using SPS method. Titanium hydride was decomposed at 450 - 500 °C and a strong joint was formed by heating at 550 °C for 10 min. The resultant reaction layer has a high adhesion strength. This technique is usable for joining Al2O3 ceramics. The interface layer between two ceramic plates was characterized by XRD, SEM and EPMA.
