抄録
Recently, 1.54 μm light emitting materials are gathered much attention for telecom applications, as it corresponds to the minimum loss wavelength of optical fibers. In this report, we demonstrate that Er-doped ZnO epitaxial films emitted intense 1.54 μm photoluminescence (PL) due to the Er 3+ intra-4f-shell transition at room temperature (RT). The epitaxial ZnO films were grown on Al2O3 (0001) by RF-magnetron sputtering at 600 oC using a metal Zn and a mixture of oxygen and argon gases. Er doping was performed by sputtering an Er2O3 target. The matrix ZnO has high crystalline quality as the PL around band gap is intense and narrow. The 1.54 μm PL intensity is ten times as high as that of the Er2O3 powder at RT. Excitation light power dependence of the PL intensity shows that energy transfer from ZnO to Er is effective to enhance the PL intensity.
