Abstract
Chemically vapor deposited (CVD) SiC was oxidized by electron cyclotron resonance (ECR) plasma in N2-O2 and Ar-02 atmospheres in the temperature range between 473 and 1073 K. The effects of temperature, oxygen partial pressure and crystal surface (i.e. Si face and C face) on the oxidation rates were investigated. The oxide thickness on the C face was larger than that on the Si face in both N2-O2 and Ar-02 atmospheres. The structure of oxide films was amorphous SiO2. The oxide formation in Ar-O2 atmosphere proceeded at lower oxygen partial pressures than that in N2-O2 atmosphere. The ECR plasma oxidation for CVD-SiC was significantly effective to produce oxide films at low temperatures.
