Relationship between intensity of ultraviolet luminescence and electron incident direction on ZnO whiskers

Abstract

We fabricated ZnO whiskers which emitted ultraviolet ray at 385 nm by electron impact, on the (100) single crystalline silicon wafer using chemical-vapor deposition apparatus operated under atmosphere. In this study, the incident angle of the electron beam to the whiskers was varied to investigate condition in which the intense cathodoluminescence is obtained. The intensity of the cathodoluminescence increased with the incident angle. 45 incidence was optimum for obtaining the intense emission.