RF-sputtered thermoelectric thin films for thermoelectric hydrogen gas sensor

Abstract

The Li doped NiO thin film was deposited by r.f. sputtering method on three different substrates and followed by thermal annealing. The catalyst Pt thin film is deposited on a half of area of NiO thin film to make a thermoelectric hydrogen sensor. As deposited NiO thin film has amorphous state and Pt thin film on this NiO film has no catalytic activity. On the other hand, thermal annealed NiO thin film has crystallized and Pt thin film on this NiO film shows usual exothermic temperature increase arise from catalytic reaction.