Abstract
We have prepared electrodeposited boron wafer by molten salts with KBF4-KF at 680°C with graphite crucible for anode and silicon wafer and nichel plate for cathodeunder various current densities of 1∼2A/cm2. Amorphous p - type boron wafers with purity 87% was deposited on nichel plate for the deposition time of 1h. The temperature dependencies of electrical conductivity showed thermal activated type with activation energy of 0.5eV. Thermoelectric power tended to increase with increasing temperature up to high temperatures with high values of(1∼10)mV/K. Thermoelectric figure of merit showed 10-4∼10-3/K at high temperatures depending on current densities.
