Preprints of Annual Meeting of The Ceramic Society of Japan
Preprints of Fall Meeting of The Ceramic Society of Japan
Preprints of Annual Meeting of The Ceramic Society of Japan, 2003
Session ID : 1B15
Conference information

Host: The Ceramic Society of Japan

Preparation and photoelectrochemical properties of TiO2 films by reactive helicon plasma sputtering method
*Dorjpalam Enkhtuvshin, Masahide Takahashi, Toshinobu Yoko
Author information
CONFERENCE PROCEEDINGS FREE ACCESS

Details
Download citation RIS

(compatible with EndNote, Reference Manager, ProCite, RefWorks)

BIB TEX

(compatible with BibDesk, LaTeX)

Text
How to download citation
Contact us
Abstract
Highly reduced TiO2 thin film in its rutile modification was prepared by means of helicon sputtering method without applying an additional reducing treatment. Photoelectrochemical (PEC) properties of such sputter deposited films are studied in comparison with that of sol-gel derived TiO2 films. Band model describing the observed PEC characteristics of the helicon plasma sputter deposited highly reduced TiO2 film is then proposed.
Content from these authors
© The Ceramic Society of Japan 2003
Previous article Next article
Favorites & Alerts

Recently viewed articles
Share this page
feedback
 Top