Abstract
A silica sol was prepared from a solution of mole ratio, Si(OC2H5)4: HNO3: H20 = 1 : 0.01 : 2, which was then diluted with various amounts of C2H50H to obtain sols of various viscosities. Get films 0.06-0.60 μm in thickness were deposited on Si wafers by spin-coating, which were then heated at a constant rate of 5°C/min up to 500°C. In situ measurement of stress in films were conducted on heating using a thin film stress measurement instrument (FLX-2320, Tencor). In-plane intrinsic stress was tensile, increasing with increasing temperature, irrespective of the initial thickness. The dependence of the internal stress on film thickness was basically absent.
