Abstract
Silica gel films were prepared on Si wafers by spin-coating using solutions of molar compositions, Si (OC2H5)4: H2O : HNO3: C2H50H = 1 : 2 : 0.01 : 5, Si (OC2H5)4: PVP : H20 : HNO3: C2H5OH = 1 : 0.5: 2 : 0.01 : 20, and Si(OC2H5)4 : CH3Si(OC2H5)3 : H20 : HNO3 : C2H50H = 0.4 : 0.6 : 2 : 0.01 : 5. The gel films were heated at a constant rate of 5°C/min up to 500°C, where in itu measurement of stress in films were conducted using a thin film stress measurement instrument (FLX-2320, Tencor). PVP or CH3Si (OC2H5)3 in solutions was found to decrease the intrinsic, in-plane stress in films that develops on heating.
