Abstract
The purpose of this study is to prepare a porous TiO2 thin film which had high humidity sensitivity. The samples were prepared by use of RF magnetron sputtering using with TiO2-SiO2 sintered target and subsequent selective leaching of SiO2 component. The compositions of targets were set as x =80-100 mass% in xTiO2-(100-x)SiO2. Clear relationship was found between electric resistance and relative humidity. The electrical resistances of the samples without selective leaching were smaller than those of leached samples. Since the tendency of electrical resistance change against humidity changed at about 50%RH, the conducting mechanism is considered to be different between low and high humidity regions.
