Dielectric property and annealing process of BaTiO3 thin films for LaNiO3/BaTiO3 thin film multilayer capacitor

Hirokazu Yokoi; Naoki Wakiya; Kazuo Shinozaki; Nobuyasu Mizutani

doi:10.14853/pcersj.2003S.0.549.0

Preprints of Annual Meeting of The Ceramic Society of Japan
Preprints of Fall Meeting of The Ceramic Society of Japan

Preprints of Annual Meeting of The Ceramic Society of Japan, 2003

Session ID : 2K06

DOI https://doi.org/10.14853/pcersj.2003S.0.549.0

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Host: The Ceramic Society of Japan

Dielectric property and annealing process of BaTiO3 thin films for LaNiO3/BaTiO3 thin film multilayer capacitor

*Hirokazu Yokoi, Naoki Wakiya, Kazuo Shinozaki, Nobuyasu Mizutani

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Abstract

LaNiO3(LN) and BaTiO3(BT) thin film was deposited on Si(001) substrate by RF-magnetron sputtering. BT thin film was deposited at R.T. and tried to crystallize by post annealing. Crystallized BT was obtained in the annealing temperature range above 600°C. Relative permittivity of BT annealed at 600°C was obtained from 20 to 150 at respective annealing time.

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