Improvement of SiO2 interface structure of rare earth element stabilized ZrO2 gate dielectric by doping with Ta

Abstract

The effect of the Ta doping on the growth of the SiOx layer in YSZ/Si gate dielectrics was investigated by HRTEM method. Most of the YTaSZ layer epitaxially grown like as YSZ layer. It was, however, out of expectation that the SiOx thickness of Ta doped YSZ/Si became thicker than YSZ/Si, and that the roughness of the interface between SiOx/Si was increased.