Abstract
AlN growth on SiC is a good candidate as the substrate for nitride high-power devices because of high thermal conductivity. However a large number of defects appear in AlN film, because commercially available SiC substrates have many scratches arising from polishing damages. The AlN film on atomically flat 6H-SiC surface, etched by removing the graphite layer formed in vacuum annealing, had no pits and the steps corresponding to the 6H-SiC unit cell height. The morphology of AlN film was significantly improved compared to that on the as-received SiC surface.
