Growth of GaN crystals by vapor phase method

Abstract

Needle-like GaN crystals were grown on various substrates by reaction with NH3 of Ga2O gas formed by reaction of Ga2O3 with carbon. The reaction of Ga2O3 with carbon was performed at 950°C. The generated Ga2O gas was transported by Ar in the inner silica tube. The Ga2O gas was reacted with flowing NH3 in the other silica tube at 1000°C. The crystals were identified as wurtzite GaN by XRD and Raman spectroscopy. It was found that the morphology of GaN crystals is affected by the kind of substrates.