Abstract
Gel films were deposited on Pt/Ti/SiO2/Si substrates by spin-coating using a Ba(CH3C00)2-Bi(CH3(CH2)3CH(C2H5)C00)3-Ti(OC3H7i)4-PVP-CH3(CH2)3CH(C2H5)C00H-H2O-CH30C2H40H-CH3COOH solution. The gel films were heated successively at 300°C for 10 min and 700 or 800°C for 10 min, and the gel film deposition and heat-treatment were repeated. When the post-heating was conducted at 700°C, the film contained Bi2Ti2O7 impurity phase, while single-phase BaBi4Ti4O15 was obtained at 800°C. A BaBi4Ti4O15 film 3.0 μm in thickness was obtained via 5 times coating with post-heating at 800°C, which exhibited P-E hysteresis and had a dielectric constant of 254 at 1 kHz.
