Dielectric properties of PZT thin films with PT and PZ alternate supply using pulsed MOCVD

Abstract

Pb(Zr,Ti)O3 (PZT) thin films were deposited by pulsed metal-organic chemical vapor deposition (MOCVD) with PT and PZ alternate supply on the MgO and Pt/MgO substrates. With increasing the pulse width of the alternate supply of the raw vapor gases, PZT(001) peak was splited into PZT, PT and PZ peaks. Interdiffusion between adjacent layers might be difficult with increasing the pulse width. In addition, polarization with applied voltage was decreased and increased again with increasing the pulse width.