Capacitor technology with high dielectric thin films

Abstract

The high-dielectric perovskite thin films are being developed as capacitor materials for use in on-chip decoupling and tunable devices and next-generation DRAMs. Although some devices have been already commercialized in a limited market, the dielectric thin-film technology is still immature with numerous problems to be solved for further improvement in electrical performance and reliability. In particular, the comprehensive understanding of electrical natures and associated metastable defects inherent in the thin films is essential to serious commercialization. In this report, the current parallel-plate capacitor technology and issues of (BaxSr1-x)TiO3 thin films for high-frequency devices will be discussed.