Structure and properties of zirconia films prepared by ECR plasma MOCVD

Abstract

Zirconia (ZrO₂) thin films were prepared at low temperature by ECR (electron cyclotron resonance) plasma MOCVD. Zr-hexafluoroacetylacetonato [Zr(Hfac)₄] was used as a CVD source. Cubic and tetragonal zirconia films were obtained cubic and monoclinic zirconia films were obtained below T_sub=473 K. Crystallized zirconia film was prepared with no heating. The ECR plasma was significantly effective to prepare crystallized zirconia films at low temperature. The deposition rate was 10 nm/min.