Abstract
The growing of the single crystalline film is the steady measures to actualize the useful properties of the material. The epitaxial film growth on the single-crystal substrate is one of the most advisable ways to achieve the deposition of single crystalline films. From the viewpoint of application to the Si integration technology, the film deposition on an amorphous oxide layer such as SiO2 will become a more frequent situation because of the vertically integrated architecture. The object of this work is to develop a deposition method for such a single crystalline film on an amorphous SiO2 layer. Here we will show the preliminary AFM and XRD results for the formation of a single-crystal-like Pt film on a SiO2 glass.
