Low temperature preparation of silicon nitride passivation films for organic EL display by catalytic CVD

Abstract

Silicon nitride (SiNx) films are useful not only for insulating films in semiconductor devices but also for passivation films. In this study SiNx films prepared by catalytic CVD at low temperatures were examined for passivation films for organic EL devices. In catalytic CVD source-gas molecules for SiNx films such as SiH4, NH3 and H2 are decomposed on heated catalyzer in vacuum chamber by catalytic cracking reaction. In this case 1) low-temperature formation below 80 C, 2) resistance for moisture or oxygen penetration, 3) transparency and 4) low stress below 100 MPa are required for passivation films. So far SiNx films with high barrier properties below 0.01 g/m2day, which is the detection limit by MOCON method, without light absorption and low stress below several-tens MPa were obtained. SiNx films prepared at room temperature or at deposition rates faster than 100 nm/min will be also introduced.