Electroluminescence of Er-doped polycrystalline ZnO thin film prepared by sputtering method

Abstract

Electroluminescence from ZnO thin film including small amount of Er ions was investigated. The sample construction was ITO / fluorescent film / ITO / SiO_{2 glass substrate. Only infrared light emission (1.3 – 1.6 micron) was observed when applying suitable electric field, however, it was extremely unstable. Change of electronic state of ZnO by doping Er ions might be related to the electroluminescence characteristics.}