Abstract
Ferroelectric Bi4Ti3O12 (BiT) has attracted much attention because of a large spontaneous polarization along the a axis. Defects such as oxygen vacancies and holes, however, impede polarization switching by electric field, leading to a poor polarization property. In this study, we have investigated the effects of Mn-Mo co-doping on the defects in BiT crystals. Mn doping is expected to reduce hole concentration due to the valence change of Mn during cooling, while Mo doping is considered to decrease oxygen vacancies. The crystals with various amount of Mn and Mo were grown by a self-flux method, and their polarization and leakage current properties along the a axis were evaluated. The details will be shown in the poster presentation.
