Abstract
A colossal electroresistance multilayered chip device composed of polycrystalline 0.8 at.% La-doped SrTiO3 and Pd electrodes has been successfully fabricated. It is found that polycrystalline SrTiO3 and Pd devices exhibit a large hysteresis in their current-voltage (I-V) characteristics after the forming process. Further, their resistance states can be switched by applying voltage pulses above 50 V, and the resistance changes by approximately two orders of magnitude. Such a large resistance change and high switching voltage indicate that resistance switching occurs at the interface of the electrodes and grain boundaries.
