Sputtering deposition of (Ba,Sr)TiO₃ dielectric thin films and their temperature and electrical properties

Abstract

Ba(Sr,Ti)O3 (BST) dielectric films were deposited by rf magnetron sputtering because of interest of their microwave integrated circuit applications. The dependences of crystallinity and electrical properties of the films on sputtering conditions were investigated. Epitaxial BST films can be obtained on MgO and sapphire substrates at substrate temperature of 650oC. The crystallinity of films obtained depend on oxygen partial pressure in sputtering gas revealing that their electrical properties were improved at low partial pressure.