Abstract
This study investigates the effect of doping on the electrical properties of BST thin film capacitors. BST thin films were deposited by an RF magnetron sputtering technique on Si wafers. BST films were prepared with Y concentration of 0-5%. Lattice parameters were measured using synchrotron radiation and the zero strain state of the film for each composition determined from X-ray analysis. The results show that the film strain state strongly depends on Y composition with tunability decreasing with increasing tensile strain. Mechanisms for the observed changes in permittivity, tunability due to doping will be discussed.
