Kinetic analysis on formation of GaN from Ga2O3 by NH3

Abstract

Kinetic analysis was carried out on the nitridation of Ga2O3 powder by NH3. Weight changes due to the reaction were monitored by thermogravimetry at 800, 900, and 1000 degree C. The product phases were determined by XRD, and microstructure of the products observed by SEM. Weight loss of the Ga2O3 powder started at 700 degree C and severely occurred at 1140 degree C. GaN and metal Ga were formed in the sample heated up to 1200 degree C. Isothermal nitridation at 800 degree C to 1000 degree C showed that the reacted fraction (alfa) from Ga2O3 to GaN was linearly increased against the time in the range of alfa from 0.2 to 0.8.