Abstract
In recent years, (100)-oriented cerium oxide (CeO2) films have attracted increasing attention as catalysts because of the particular CeO2 ability to store and release oxygen and the inherent high reactivity of the (100) plane. In this study, (100)-oriented CeO2 films were prepared on amorphous glass substrates in a cold-wall type laser chemical vapor deposition (LCVD) apparatus using Ce(dpm)4 as the precursor. The semiconductor laser (808 nm wavelength) system employed in this study allowed a maximum power output (PL) of 200 W and a defocused laser spot about 20 mm in diameter. CeO2 films prepared at PL=0 and 200 W were non-oriented. However, at PL=50, 100 and 150 W, CeO2 films exhibited a (100) preferred orientation and a feather-like columnar microstructure. Particularly, the CeO2 films prepared at PL=100 W showed the almost complete (100) orientation and the highest deposition rate of about 120 umh-1.
