Host: The Ceramic Society of Japan
A dielectric film with high capacity is expected for the performance improvement and stabilization of electronics. In this study, we focus electrophoretic deposition method as an easy-to-use film-forming process and examined an optimal preparation condition of the Ba1-xSrxTiO3(BST) dielectric film. As a result, it was found that a BST film deposited for 2sec at 80V with 10g/l binder-free BST slurry were significantly dense and homogeneous. After a heat-treatment at 800oC for 30min in air, the deposited film showed 1.85% of dielectric loss. The obtained film with ultrafine BST slurry was relatively thin and uniform.
