Abstract
Microwave heating properties of a solid state sintered SiC and a reaction bonded SiC were studied. A multi mode microwave furnace at 2.45GHz with maximun 6kW input was used. Temperature rising rate of the solid state sintered SiC was faster than that of the reaction bonded SiC. And maximum temperature of the solid state sintered SiC was higher than that of the reaction bonded SiC.