Abstract
Effect of SrTiO3 seed layer on low-temperature crystallization of Pb(Zr,Ti)O3 thin films was investigated. The PZT thin films were prepared at 290-340oC on SrTiO3 seed layers which deposited by PLD for 5-30sec at 400-600oC on (111)Pt/SiO2/(100)Si. From the TEM microstructure observation, it was found that PZT thin films deposited at 340oC consisted of amorphous and partially crystallized PZT films. It was also found that crystal orientation of SrTiO3 seed layer was changed with its deposition time and it was affected to crystal orientation of PZT film. The 5 sec of SrTiO3 deposition time showed maximum (111) intensity. Substrate heating method also affects the crystallization temperature. The induction heating reduced the crystallization temperature into 290oC and Pr=20mC/cm2, but resistive heating to 340oC and 25mC/cm2.
