New development in rare-earth-doped semiconductors

Abstract

The luminescent and magnetic properties of rare-earth (RE) elements doped in insulators and metals have been thoroughly investigated, and they have been successfully applied to practically used fluorescent substances and magnets. In RE-doped semiconductors with atomic-level control, we have studied not only the exploitation of luminescent and magnetic properties but also the exploitation of new functionalities provided by their fusion. In this contribution, new development in RE-doped semiconductors, in particular Er,O-codoped GaAs with an Er-2O center, is discussed with their future prospect.