Development of joining technique for silicon carbide and stainless steel

Abstract

The joining technique for silicon carbide and stainless steel was developed. Nickel layer was used as interlayer to reduce residual stress attributed from coefficient of thermal expansion mismatch. Tungsten layer was also used between silicon carbide and nickel layer to control reaction. No cracks were observed at joined interface. Tensile strength of the joined samples was approximately 55 MPa.