Abstract
Electrical properties of Pb(Zr0.53Ti0.47)O3 (PZT) thin films are significantly affected by the film orientation. Especially c-axis oriented PZT thin films exhibit higher electrical properties. However, perfect orientation control to c-axis is very difficult especially for the case of chemical solution deposition (CSD). Therefore, we tried to make clear the factors that affect the film orientation for the CSD-derived PZT thin films by applying the thermal residual stress using stainless steal substrates. As a result, we successfully realized selectively c-axis oriented PZT thin film with higher remanent polarization and good squareness for the P-E hysteresis loop.