TEM analysis for compressive stresses applied to Pb(Zr,Ti)O3 thin films by bottom oxide electrodes

Abstract

We have deposited PZT thin films and bottom oxide electrodes on Si substrate by chemical solution deposition (CSD) method. Both saturation polarization and residual polarization of the PZT films have increased when they were prepared on LaNiO3 (LNO) and (La,Sr)MnO3 (LSMO) electrodes. It was obviously shown that in-plane compressive stresses applied to the PZT film resulted in enhanced ferroelectric properties of the PZT film. In the present study, microstructure and crystal structure modification of the thin film was analyzed by TEM.