Low Temperature Processing of the Alkoxide Derived PMN Thin Film

Abstract

A well-crystallized PMN thin film on a Si wafer was prepared using low-temperature processing with a LNO seeding layer. The PMN thin film was crystallized at 550 C on a LNO/Si stacking structure. Additionally, we attempted to apply the compressive residual stress to PMN layers for a Curie temperature shift. Results show that the ferroelectric property remained at room temperature. The remanent polarization increased concomitantly with increasing annealing temperature.