Plasma and Fusion Research
Online ISSN : 1880-6821
ISSN-L : 1880-6821
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Effect of Higher-Order Silane Deposition on Spatial Profile of Si-H2/Si-H Bond Density Ratio of a-Si:H Films
Liu SHIKazuma TANAKAHisayuki HARAShota NAGAISHIDaisuke YAMASHITAKunihiro KAMATAKINaho ITAGAKIKazunori KOGAMasaharu SHIRATANI
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2019 Volume 14 Pages 4406144

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Abstract

We studied how the deposition of SiH3 radicals, higher-order silane molecules, and clusters contributed to the bond configuration of hydrogenated amorphous silicon (a-Si:H) films. In our experiment, the deposition of three species was controlled using a multi-hollow discharge plasma chemical vapor deposition (MHDPCVD) method using a cluster-eliminating filter. We reduced the incorporation of higher-order silane (HOS) molecules into the films by increasing the gas flow velocity in the hollows from 1008 to 2646 cm/s. The results show that the lower incorporation of HOS molecules into the films reduced the SiH2/SiH bond ratio, i.e., ISiH2/ISiH. Moreover,two-dimensional profiles of the ISiH2/ISiH ratio and the surface morphology suggest that the surface migration of HOS molecules is similar to that of the SiH3 radicals, and the ISiH2/ISiH ratio is localized by the deposition of HOS molecules. Moreover, the results of optical emission spectroscopy show that HOS radical generation is irrelevant to the gas flow velocity.

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© 2019 by The Japan Society of Plasma Science and Nuclear Fusion Research
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