Abstract
The impact of the wafer edge Roll–Off on polishing profiles of CMP was investigated by FEM analysis. In the former report, it was shown that, in case of a stacked pad, the polishing profiles at wafer peripheries were influenced by the wafer edge Roll–Off. In this report, a similar analysis was executed for a solo pad, and the former and current results were compared to each other. As the result, it was also shown that the polishing profiles at wafer peripheries of the solo pad were influenced by the wafer edge Roll–Off. Moreover, a margin of the wafer edge Roll–Off for the process with the solo pad was smaller than one for the process with the stacked pad.
