Evaluation of organic molecular devices using nano-gap flat electrodes

Abstract

We tried to fabricate a nano–gap flat electrode without step on the edge of the metal electrode in order to measure the electrical transport properties of nano–structured molecules. A resist pattern on n–type Si substrate with a 100nm thick SiO2 was made by electron beam lithography, and etched by reactive ion etching machine. After Ti/Cu deposition and lift–off, an embedded–nano–electrode, which was a predecessor of the flat–nano–electrode, was fabricated. The surface was polished using mechanical grinding, then a nano–gap flat electrode whose surface roughness was less than a few nano meters was accomplished.